SX12N10Y 100V N-Channel Enhancement Mode MOSFET

2025-03-21
SX12N10Y是一款采用先进沟槽技术的100V N-Channel增强型MOSFET,提供优异的RDS(ON)、低栅极电荷,并可在低至4.5V的栅极电压下运行。该器件的RDS(ON)小于140mΩ @ VGS=10V,适用于电池保护或开关应用。它特别适合LED照明、负载开关、雾化器等应用。

SXSEMI

SX12N10Y

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MOSFET

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LED照明 ]负载开关 ]雾化器 ]

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Datasheet

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Please see the document for details

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TO-251-3L

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