Dual N-Channel MOSFET

2025-03-20
The AO4884 is a dual N-Channel MOSFET that utilizes advanced trench technology to offer excellent RDS(ON) with low gate charge. It is an all-purpose device suitable for a wide range of power conversion applications. The device features a drain-source voltage of 40V, a continuous drain current of 10A at 25°C, and has various electrical characteristics such as drain-source breakdown voltage, gate-source voltage, and power dissipation. It is available in a SOP-8 package.

UMW

AO4884

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Part#

MOSFET

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Power conversion applications ]

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Datasheet

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SOP-8

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