TN0112S N-Channel Super Trench Power MOSFET

2025-03-20
TN0112S是一款采用Super Trench技术的N通道超级沟槽功率MOSFET,专为提供高效高频开关性能而优化。由于其极低的RDS(ON)和Qg组合,导通和开关功率损耗都得到了最小化。该器件非常适合高频开关和同步整流应用。其主要特性包括VDS =100V, ID =12A,RDS(ON)=9.9mΩ(typical) @ VGS=10V,RDS(ON)=11.5mΩ(typical) @ VGS=4.5V,以及150°C的运行温度。它适用于DC/DC转换器,特别适合高频开关和同步整流。

TNSEMI

TN0112S

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Part#

Power MOSFET

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DC/DC Converter ]高频开关和同步整流 ]

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Datasheet

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