TN20PK0402J Integrated P-Channel Enhancement Mode Power MOSFET and Schottky Diode

PublishTime：2025-03-20

TN20PK0402J是一款采用先进沟槽技术的功率MOSFET和肖特基二极管组合器件。该器件提供优异的RDS(ON)和低栅极电荷，并配备肖特基二极管，便于实现双向阻断开关或DC-DC转换应用。MOSFET的主要特性包括VDS = -20V, ID = -4A，RDS(ON) < 80mΩ@ VGS=-4.5V，RDS(ON) < 100mΩ@ VGS=-2.5V，RDS(ON) < 160mΩ@ VGS=-1.8V。肖特基二极管的主要特性包括VKA(V) = 20V, IF = 2A, VF<0.45V@0.5A。该器件适用于双向阻断开关和DC-DC转换应用。

Brand of Product：	TNSEMI
Part#：	TN20PK0402J More Part#
Product Category：	功率MOSFET 、肖特基二极管 More
Application：	[ 双向阻断开关 ][ DC-DC转换应用 ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	DFNWB2X2-6L
Language：	English Chinese Chinese and English Japanese
Date of Creation：
Version Number：
Data Encoding：
Data Size：	562 KB

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