BRCS035N03YB DATA SHEET
■PDFN3×3A-8L 塑封封装 N 沟道 MOS 场效应管。
■N-Channel Enhancement Mode Field Effect Transistor in a PDFN3×3A-8L Plastic Package.
●特征 / Features
■VDS (V) = 30V ID =76A (VGS =±20V)
■RDS(ON) @10V≤3.5mΩ(Typ.3.3mΩ)
■RDS(ON) @4.5V≤6.5mΩ(Typ.4.7mΩ)
■无卤产品。HF Product.
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N 沟道 MOS 场效应管 、 N-Channel Enhancement Mode Field Effect Transistor |
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[ 负载开关 ][ 电池电源管理 ][ Load Switch ][ Battery Power Management ] |
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Datasheet |
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Please see the document for details |
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PDFN3×3A-8L |
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English Chinese Chinese and English Japanese |
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Oct.-2024 |
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Rev.B |
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1.7 MB |
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