BRCS035N03YB DATA SHEET
■PDFN3×3A-8L 塑封封装 N 沟道 MOS 场效应管。
■N-Channel Enhancement Mode Field Effect Transistor in a PDFN3×3A-8L Plastic Package.
●特征 / Features
■VDS (V) = 30V
■ID =74A (VGS = ±20V)
■RDS(ON) @10V≤3.7mR(Typ.3.5mR)
■RDS(ON) @4.5V≤6.5mR(Typ.4.5mR)
■符合 AEC-Q101 标准高可靠性要求，无卤产品。Qualified to AEC-Q101 Standards for High Reliability,HF Product.
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N 沟道 MOS 场效应管 、 N-Channel Enhancement Mode Field Effect Transistor |
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[ 负载开关应用 ][ 电池电源管理 ][ 汽车应用 ][ Load Switch Applications ][ Battery Power Management ][ automotive applications ] |
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Datasheet |
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Please see the document for details |
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PDFN3×3A-8L |
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English Chinese Chinese and English Japanese |
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Nov.-2023 |
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Rev.A |
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1.8 MB |
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