HMS160N10, HMS160N10D N-Channel Super Trench II Power MOSFET

PublishTime：2024-11-15

●Description
■The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg . This device is ideal for high-frequency switching and synchronous rectification.
●General Features
■VDS =100V,ID =160A
▲RDS(ON)=2.7mΩ , typical @ VGS =10V ID=20A
■Excellent gate charge x RDS(on) product(FOM)
■Very low on-resistance RDS(on)
■175℃ operating temperature
■Pb-free lead plating

Brand of Product：	Hongmei Power Semiconductor
Part#：	HMS160N10 、 HMS160N10D More Part#
Product Category：	N-Channel Super Trench II Power MOSFET More
Application：	[ high-frequency switching ][ DC/DC Converter ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-220;TO-263;TO-263-2L;TO-220-3L
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2024/9/3
Version Number：
Data Encoding：
Data Size：	950 KB

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