8205A Dual N-Channel Enhancement Mode MOSFET

2024-09-24
●General Description
■The 8205A is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved.
●General Features
■VDS = 20V ID = 6A
■RDS(ON) < 27mΩ @ VGS=4.5V
■RDS(ON) <37mΩ @ VGS=2.5V

HUA XUAN YANG ELECTRONIC

8205A

More

Part#

Dual N-Channel Enhancement Mode MOSFEThighest performance trench N-ch MOSFETsDual N-Channel MOSFET

More

small power switching ]load switch applications ]Battery protection ]Uninterruptible power supply ]

More

Datasheet

More

More

Please see the document for details

More

More

TSSOP-8

English Chinese Chinese and English Japanese

2023/12/8

1.2 MB

- The full preview is over. If you want to read the whole 7 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: