8205A Dual N-Channel Enhancement Mode MOSFET
■The 8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
●General Features
■VDS=20V,ID=6A
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Dual N-Channel Enhancement Mode MOSFET 、 Dual N-Channel MOSFET |
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[ Battery ][ Load switch ][ Power management ] |
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Datasheet |
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Please see the document for details |
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SOT23-6L |
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English Chinese Chinese and English Japanese |
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2022/12/14 |
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1.8 MB |
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