HXY50N06D N-Channel Enhancement Mode MOSFET
■The HXY50N06D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
●General Features
■VDS = 60V ID =50 A
■RDS(ON) < 15mΩ @ VGS=10V
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[ Battery protection ][ Switching application ][ Uninterruptible power supply ][ Load switch ] |
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Datasheet |
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Please see the document for details |
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TO252-2L |
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English Chinese Chinese and English Japanese |
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2023/7/27 |
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843 KB |
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