HXYG50N06NF N-SGT Enhancement Mode MOSFET

PublishTime：2024-09-20

●General Description
■The HXYG50N06NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.
■This device is specially designed to get better ruggedness and suitable to use in
●General Features
■VDS = 60V ID =50 A
■RDS(ON) < 14mΩ @ VGS=10V

Brand of Product：	HUA XUAN YANG ELECTRONIC
Part#：	HXYG50N06NF More Part#
Product Category：	N-SGT Enhancement Mode MOSFET 、 N-Channel MOSFET More
Application：	[ Consumer electronic power supply Motor control ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	DFN5X6-8L
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2023/8/2
Version Number：
Data Encoding：
Data Size：	914 KB

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