HXY12N65F Silicon N-Channel Power MOSFET

2024-09-23
●Description
■The HXY12N65F can be used in various power swithching circuit for system miniaturization and higher efficiency.The age form is TO-220F, which accords with the RoHS standard.
●General Features
■VDS = 650V,ID = 12A
■RDS(ON) < 0.8 Ω@ VGS=10

HUA XUAN YANG ELECTRONIC

HXY12N65F

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Part#

Silicon N-Channel Power MOSFETN-Channel MOSFET

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Power switch circuit ]adaptor and charger ]

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Datasheet

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Please see the document for details

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TO-220F

English Chinese Chinese and English Japanese

2023/7/27

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