HXY12N65F Silicon N-Channel Power MOSFET
■The HXY12N65F can be used in various power swithching circuit for system miniaturization and higher efficiency.The age form is TO-220F, which accords with the RoHS standard.
●General Features
■VDS = 650V,ID = 12A
■RDS(ON) < 0.8 Ω@ VGS=10
Datasheet |
|
|
|
Please see the document for details |
|
|
|
|
|
TO-220F |
|
English Chinese Chinese and English Japanese |
|
2023/7/27 |
|
|
|
|
|
879 KB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.