CE65H110TOAI CoreGaN 650V GaN HEMT DATASHEET
■The CE65H110TOAI Series 650V, 110mΩ gallium nitride (GaN) FETs are normally-off devices.
■Corenergy GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and lower dynamic on-resistance,delivering significant advantages over traditional silicon (Si) devices.
■Corenergy is a leading-edge wide band gap supplier with world-class innovation.
●General Features
■Easy to drive—compatible with standard gate drivers
■Low conduction and switching losses
■RoHS compliant and Halogen-free
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[ Adapter ][ Renewable energy ][ Telecom ][ data-com ][ Servo motors ][ Industrial ][ Automotive ] |
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Datasheet |
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Please see the document for details |
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TO220 |
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English Chinese Chinese and English Japanese |
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2023-12-25 |
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REV.3.0 |
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1.1 MB |
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