CE65E160DNYI CorEnergy 650V GaN HEMT DATASHEET
■The CE65E160DNYI Series 650V, 160mΩ gallium nitride (GaN) FETs are normally-off devices. Corenergy GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon (Si) devices.
■Corenergy is a leading-edge wide band gap supplier with world-class innovation.
●General Features
■Low conduction and switching losses no free-wheeling diode required RoHS compliant and Halogen-free
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Datasheet |
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Please see the document for details |
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DFN;DFN5*6-8L-A |
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English Chinese Chinese and English Japanese |
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2022.10 |
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REV.1.0 |
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1.9 MB |
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