NSD2621X Half-bridge GaN Driver Datasheet (EN) 1.2
■NSD2621X is an integrated half-bridge gate driver which is designed for GaN HEMT.
■The driver operates with a wide supply voltage from 10V to 18V, while internal regulator could offer stable driver voltage to keep GaN FET safe.
■The undervoltage lock-out (UVLO) protection feature is provided in low side and high side drivers to prevent the GaN FET from operating in low efficiency or dangerous conditions
■The programmable dead-time control function has been provided. The adjustable dead-time range is from 20ns to 100ns.
■The device operates in the industrial temperature range, -40℃ to 125℃, and is available in a compact 4.0 x 4.0 mm QFN package.
●Key Features
■700V Half-bridge Gate Drivers
■Integrated High-side and Low-side Output Regulators
■UVLO protection on low side and high side
■Source/Sink Current: 2A/ 4A
■Propagation Delay: 30ns TYP
■Short switching delay and mismatch
■Independent turn-on and turn-off adjustable
■Programmable Deadtime from 20ns to 100ns
■Allowable SW slew rate: 150V/ns
■Operating Temperature: -40~125℃
■RoHS & REACH Compliance
■Lead-free component, suitable for lead-free soldering profile: 260℃
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[ GaN HEMT ][ Driving GaN power FET ][ Half-bridge converter ][ full-bridge converter ][ active flyback converter ][ forward converter ][ LLC DC-DC converter ][ AC-DC converter ][ Industrial Inverters ][ Motor Drives ] |
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Datasheet |
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Please see the document for details |
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QFN |
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English Chinese Chinese and English Japanese |
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2024/06/24 |
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Revision 1.2 |
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1.1 MB |
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