NSD2621X Half-bridge GaN Driver Datasheet (EN) 0.3
■NSD2621X is an integrated half-bridge gate driver which is designed for GaN transistors.
■The driver operates with a wide supply voltage from 10V to 18V, while internal regulator could offer stable driver voltage to keep GaN transistors safe.
■The undervoltage lock-out (UVLO) protection feature is provided in low side and high side drivers to prevent the GaN transistors from operating in low efficiency or dangerous conditions
■The programmable dead-time control function has been provided.
■The device operates in the industrial temperature range, -40°C to 125°C, and is available in a compact 4.0x4.0 mm QFN package.
●Key Features
■700V Half-bridge Gate Drivers
■Integrated High-side and Low-side Output Regulators
■UVLO protection on low side and high side
■Source Current: 2A/Sink Current: 4A
■Propagation Delay: 30ns TYP
■Short switching delay and mismatch
■Programmable Deadtime
■Allowable SW slew rate: 150V/ns
■Operating Temperature:-40~125℃
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[ GaN transistors ][ Driving GaN power transistors ][ PFC and AC-DC converter ][ Half-bridge DC-DC converter ][ full-bridge DC-DC converter ][ active flyback DC-DC converter ][ active forward ][ DC-DC converter ][ LLC DC-DC converter ] |
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Datasheet |
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Please see the document for details |
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QFN;QFN15 |
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English Chinese Chinese and English Japanese |
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2023/05/08 |
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Revision 0.3 |
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3.3 MB |
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