HM18N20K N-Channel Enhancement Mode Power MOSFET
■The HM18N20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
●General Features
■VDS =200V,ID =18A
▲RDS(ON) <120mΩ @ VGS =10V（Typ：100mΩ）
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Low gate to drain charge to reduce switching losses
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[ Power switching application ][ Hard switched circuits ][ high frequency circuits ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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TO-252-2L |
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English Chinese Chinese and English Japanese |
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2023/7/24 |
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v1.0 |
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908 KB |
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