HM180N02 N-Channel Enhancement Mode Power MOSFET
■The HM180N02 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. It an be used in a wide variety of applications.
●General Features
■VDS =20V,ID =185A; RDS(ON) <2.0 mΩ @ VGS =4.5V; RDS(ON) <2.4mΩ @ VGS =2.5V
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high EAS
■Excellent package for good heat dissipation
■Special process technology for high ESD capability
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[ Power switching ][ Hard switched and high frequency circuits ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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TO-220-3L |
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English Chinese Chinese and English Japanese |
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2022/11/10 |
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597 KB |
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