S20N60K 20V N-Channel MOSFETs
■ These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
●Features
■20V, 2.5A, RDS(ON)Max. = 60mΩ@VGS = 4.5V
■Improved dv/dt capability
■Fast switching
■Green Device Available
■Suit for 1.8V Gate Drive Applications
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N-Channel MOSFETs 、 N-Channel enhancement mode power field effect transistors |
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[ Notebook ][ Load Switch ][ Hend-Held Instruments ] |
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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2023/8/23 |
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V 1.1 |
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1.6 MB |
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