WSR130N06 N-Ch MOSFET
■The WSR130N06 use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge,fast switching and excellent avalanche characteristics.
■This device is specially designed to get better ruggedness and suitable to use in
●Features
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high EAS
■Excellent package for good heat dissipation
■Special process technology for high ESD capability
Datasheet |
|
|
|
Please see the document for details |
|
|
|
|
|
TO-220AB |
|
English Chinese Chinese and English Japanese |
|
Dec.2014 |
|
|
|
|
|
1.5 MB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.