WSR150N04 N-Ch MOSFET
■The WSR150N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
●Features
■ High density cell design for ultra low Rdson
■ Fully characterized avalanche voltage and current
■ Good stability and uniformity with high EAS
■ Excellent package for good heat dissipation
■ Special process technology for high ESD capability
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[ Load switch ][ Battery protection ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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TO-220AB |
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English Chinese Chinese and English Japanese |
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Mar.2022 |
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Rev.1.0 |
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1.6 MB |
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