CGC02001 650V Half-Bridge GaN Transistors with Gate Driver DATASHEET
●General description
■The CGC02001 is an advanced system-in-package (SIP) power ICs, consisting of gate driver and two 650-V enhancement-mode GaN power transistors in half-bridge configuration.
■The integrated GaN power transistors have RDS(on) of 350 mΩ and 350 mΩ for high- and low-side and drain-source blocking voltage of 650 V.
■The CGC02001 features wide power supply range. And the high-side driver can be easily supplied by bootstrap circuit. Both the high-side and low-side gate drive voltage (VDDH and VDDL) is provided by internal voltage regulator, making an easy circuit design.
■The CGC02001 features UVLO function for both high-side and low-side driving sections, preventing GaN transistors from operating in low-efficiency or unsafe conditions. The programmable deadtime function can avoid cross-conduction conditions.
■The input signal pin arrangement allows easy interfacing with controllers.
■The CGC02001 operates in the industrial temperature range of -40 ℃ to 125 ℃. The device is in available in 9mm*9mm QFN package.
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Half-Bridge GaN Transistors 、 advanced system-in-package (SIP) power ICs 、 integrated GaN power transistors 、 Integrated half-bridge GaN transistors |
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[ Switch-mode power supplies ][ Chargers ][ adaptors ][ DC/DC converters ][ DC/AC converters ][ ACF ][ AHB ][ LLC ][ totem-pole PFC ] |
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Datasheet |
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Please see the document for details |
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QFN;QFN9*9 |
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English Chinese Chinese and English Japanese |
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2023/12/5 |
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Rev.1.0 |
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1.1 MB |
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