CSM12P03 P-Channel Enhancement Mode Power MOSFET
●The CSM12P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
■GENERAL FEATURES:
●VDS = -30V,ID = -20A
◆RDS(ON) < 25mΩ @ VGS=-4.5V
◆RDS(ON) < 15mΩ @ VGS=-10V
●High Power and current handing capability
●Lead free product is acquired
●Surface Mount Package
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[ Battery Switch ][ Load Switch ][ Power Management ] |
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Datasheet |
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Please see the document for details |
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PDFN3.3*3.3 |
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English Chinese Chinese and English Japanese |
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2024/2/26 |
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Ver1.1 |
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1.5 MB |
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