CSM12N08 80V N-Channel Power MOSFET
●The CSM12N08 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
■KEY CHARACTERISTICS:
●VDS = 80V,ID = 70A
◆RDS(ON) < 11.5mΩ @ VGS=10V
●Special process technology for high ESD capability
●High density cell design for lower Rdson
●Fully characterized avalanche voltage and current
●Good stability and uniformity with high EAS
●Excellent package for good heat dissipation
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[ Power switching application ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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TO-220;TO-252-2L;TO-263;TO-252 |
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English Chinese Chinese and English Japanese |
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2024/2/26 |
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Ver1.1 |
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1.9 MB |
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