SI2302-HXY N-Channel Enhancement Mode MOSFET
■The SI2302-HXY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application
●General Features
■VDS = 20V ID =2.8A
■RDS(ON) < 55mΩ@ VGS=4.5V
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[ Switching application ][ Battery protection ][ Load switch ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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2022/11/29 |
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1.5 MB |
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