HUAXUANYANG HXY Si2303CDS-T1-GE3 P-Channel Enhancement Mode MOSFET

PublishTime：2025-04-24

The Si2303CDS-T1-GE3 is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and operates with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications, featuring high power and current handling capability, lead-free product status, surface mount package, and PWM applications.

Brand of Product：	HUA XUAN YANG ELECTRONIC
Part#：	Si2303CDS-T1-GE3 More Part#
Product Category：	MOSFET More
Application：	[ Battery protection ][ switching applications ][ PWM ][ load switch ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	SOT-23 (TO-236)
Language：	English Chinese Chinese and English Japanese
Date of Creation：
Version Number：
Data Encoding：
Data Size：	1.1 MB

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