650V GaN FETs in a Totem-Pole PFC Application Note
■In AC/DC power-factor correction (PFC) rectifiers, GaN FETs are crucial. The latter have incredibly straightforward topologies; just the inductor is magnetic among all the parts, and it’s often a constant-frequency continuous-conduction-mode inductor. Thus, the effect of GaN FETs on the functionality of PFC rectifiers may be demonstrated directly.
■Switching losses are decreased by the 650V GaN FETs’ smaller parasitic capacitances. In addition, 650V GaN FETs have lower on-resistance than 650V Si MOSFETs within the same chip size, and GaN FETs do not suffer from reverse recovery loss.
■GaN FETs raise the peak efficiency of switching power supply to 99%. The efficiency and density enhancements made possible by GaN FET performance eventually reduce the overall cost of switching power supply systems.
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Application note & Design Guide |
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Please see the document for details |
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DFN5X6A |
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English Chinese Chinese and English Japanese |
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11.7.23 |
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Rev1 |
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