PJQ1908 50V N-Channel Enhancement Mode MOSFET
■RDS(ON), VGS@10V, ID@500mA<1.45Ω
■RDS(ON), VGS@4.5V, ID@200mA<1.95Ω
■RDS(ON), VGS@2.5V, ID@100mA<4Ω
■RDS(ON), VGS@1.8V, ID@10mA<6Ω
■Advanced Trench Process Technology
■ESD Protected 2KV HBM
■AEC-Q101 qualified
■Specially Designed for Switch Load
■Lead free in compliance with EU RoHS 2.0
■Green molding compound as per IEC 61249 standard
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[ Switch Load ] |
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Datasheet |
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Please see the document for details |
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DFN1006-3L |
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English Chinese Chinese and English Japanese |
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July 25,2023 |
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REV.00 |
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575 KB |
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