Product Overview MBR3100: Schottky Barrier Rectifier, 100 V, 3.0 A
●The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
●Features
■Low Reverse Current
■ Low Stored Charge, Majority Carrier Conduction
■ Low Power Loss/High Efficiency
■Highly Stable Oxide Passivated Junction
■Guard-Ring for Stress Protection
■Low Forward Voltage
■ 175°C Operating Junction Temperature
■ High Surge Capacity
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[ low voltage inverters ][ high frequency inverters ][ free wheeling diodes ][ polarity protection diodes ] |
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Datasheet |
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Please see the document for details |
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AxialLead-2 |
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English Chinese Chinese and English Japanese |
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1/19/2018 |
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164 KB |
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