MBR3100 Axial Lead Rectifier

2021-06-22
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,high−frequency inverters, free wheeling diodes, and polarity protection diodes.

ON Semiconductor

MBR3100MBR3100GMBR3100RLMBR3100RLG

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Part#

Rectifier

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nverters ]free wheeling diodes ]polarity protection diodes ]

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Datasheet

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Please see the document for details

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DO−201AD

English Chinese Chinese and English Japanese

June, 2006

Rev. 6

MBR3100/D

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