BSS138: 50V N-Channel Logic Level Enhancement Mode Field Effect Transistor
●This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. The BSS138 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
■Features：
●0.22 A, 50 V. R-DS(ON) = 3.5 Ω @ V-GS = 10 V. R-DS(ON) = 6.0 Ω @ V-GS = 4.5 V
● High density cell design for extremely low RDS(ON).
● Rugged and Reliable.
● Compact industry standard SOT-23 surface mount package.
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N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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Datasheet |
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Please see the document for details |
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SOT-23-3 |
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English Chinese Chinese and English Japanese |
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11/26/2017 |
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168 KB |
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