Product Overview MJD112: 2.0 A, 100 V NPN Darlington Bipolar Power Transistor
●The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices.
●Features
■Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
■Straight Lead Version in Plastic Sleeves ("1" Suffix)
■Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
■Surface Mount Replacements for TIP110-TIP117 Series
■Monolithic Construction With Built-in Base-Emitter Shunt Resistors
■High DC Current Gain h-FE = 2500 (Typ) @ I-C = 2.0 Adc
■Complementary Pairs Simplifies Designs
■NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
■PbFree Packages are Available
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MJD112 、 MJD112-1G 、 MJD112G 、 MJD112RLG 、 MJD112T4G 、 MJD112TF 、 NJVMJD112G 、 NJVMJD112T4G |
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NPN Darlington Bipolar Power Transistor 、 Darlington Bipolar Power Transistor |
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[ switching regulators ][ converters ][ power amplifiers ] |
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Datasheet |
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Please see the document for details |
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DPAK-3;IPAK-4 |
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English Chinese Chinese and English Japanese |
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10/29/2017 |
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180 KB |
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