GSF100HF65D1 IGBT Module
■ 6 50V 100A,VCE(sat)(typ.) = 1.8 V
■ Low inductive design
■ Lower losses and higher energy
■ Field Stop IGBT Technology
■Excellent short circuit ruggedness
●Mechanical Data
■Case: D1(34mm)(plastic package).
▲Lead free; RoHS compliant
■Molding Compound Flammability Rating:
▲UL 94 V-0
[ Auxiliary lnverter ][ Inductive Heating ][ Inductive Welding ][ Solar Applications ][ UPS Systems ] |
|
Datasheet |
|
|
|
Please see the document for details |
|
|
|
|
|
D1 |
|
English Chinese Chinese and English Japanese |
|
23-May-2019 |
|
Rev. 1.0 |
|
|
|
1 MB |
- +1 Like
- Add to Favorites
Recommend
- Ultra-Fast Soft Recovery Diode Module ESF100SS60S, Optimized to Reduce Losses and EMI/RFI in High Frequency Power Conditioning Electrical Systems
- Archimedes Semiconductor: Provider of High-Performance SiC/IGBT Power Semiconductors for New Energy Vehicles and Photovoltaic Storage
- How Does Press-fit Technology Elevate IGBT Production?
- Working Characteristics of IGBT
- Application Scope and Market of IGBT
- What is IGBT? What is Its Working Principle? What are Its Advantages?
- Renesas’ the next generation IGBT/AE5 offers high efficiency and ease of use
- The World‘s Best Performance IGBT Product That Responds to Energy Saving and High Performance of xEV
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.