BD2311NVX-LB Ultra-high-speed Gate Driver IC for GaN HEMT Drive (Single-channel)
●Features
■Proprietary drive system suppresses gate voltage overshoot
▲Effective for general GaN HEMTs (6V gate breakdown voltage
■Capable of generating narrow pulses for high-speed gate drive
▲Drives GaN devices with ultra-fast switching (pulse width on the order of nanosecond
■Combining with GaN HEMTs enables high-speed drive of target device
▲e.g. Narrow pulse driving of laser diodes (LiDAR)
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Ultra-high-speed Gate Driver IC 、 single-channel gate driver IC |
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[ GaN HEMT Drive ][ Automotive ][ Industrial ][ Consumer Electronics ] |
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Supplier and Product Introduction |
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Please see the document for details |
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SSON06RX2020 |
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English Chinese Chinese and English Japanese |
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09.2023 |
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1.7 MB |
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