ASC30N650MT4 650V N-Channel MOSFET
■Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
●Features
■High Speed Switching with Low Capacitances
■High Blocking Voltage with Low RDS(on)
■Optimized package with separate driver source pin
■Easy to parallel and simple to drive
■ROHS Compliant, Halogen free
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Datasheet |
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Please see the document for details |
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TO-247-4 |
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English Chinese Chinese and English Japanese |
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2023/7/26 |
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720 KB |
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