SFD2006T 60A, 20V N-CHANNEL MOSFET
■The SFD2006T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
●FEATURES
■60A,20V,RDS(on)(typ.)=5.6mΩ@VGS=4.5V
■Excellent package for good heat dissipation
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high EAS
■High density cell design for ultra low Rdson
■Special process technology for high ESD capability
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Datasheet |
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Please see the document for details |
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TO-252-2L |
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English Chinese Chinese and English Japanese |
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2021/6/29 |
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Rev 1.1 |
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2.9 MB |
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