SFD2008T 80A, 20V N-CHANNEL MOSFET
■The SFD2008T uses hi-semicon’s advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
●FEATURES
■RDS(on)(typ.)=4.0mW@VGS=4.5V,RDS(on)(typ.)=6.5mW@VGS=2.5V
■Excellent package for good heat dissipation
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high EAS
■High density cell design for ultra low Rdson
■Special process technology for high ESD capability
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[ Load Switch ][ PWM Application ][ Power management ] |
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Datasheet |
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Please see the document for details |
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TO-252-2L;DPAK;TO-252 |
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English Chinese Chinese and English Japanese |
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2020/6/20 |
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2.1 MB |
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