Pulsed Power Using High-Power Semiconductors
■This document deals with the application of high-power semiconductors like IGBTs, GTOs, and Thyristors in pulsed power applications.
●Target Audience
■This document is intended for engineers interested in or involved with pulsed power applications
●Introduction
■This document is intended to give an overview of the key aspects of the application of high-power semiconductors in pulsed power systems. Consideration is given to the Insulated Gate Bipolar Transistor (IGBT), Gate Turn-Off thyristor (GTO), and conventional thyristor or Silicon Controlled Rectifier (SCR). This application note covers the selection of the appropriate device technology, series and parallel connection of devices, gate drive aspects, and practical implementation.
■Power semiconductors have been used in pulsed power systems since the early 1990s in areas such as particle physics and research. More recently, advances in device technology and a greater understanding of device performance under pulse conditions has led to widespread commercial use. In applications such as laser drivers, ozone generators, UV sterilization, and electrostatic precipitators, semiconductor-based switching elements are becoming the norm.
■The key drivers for the adoption of semiconductor-based solutions are long term reliability, maintenance free operation, and whole life system costs. The principal obstacles to the adoption of semiconductors are system volume/weight, complexity, and the lack of widely available information. This paper aims to address this last point in particular.
■The application and suitability of power semiconductors in pulsed power has been widely reported.
High-Power Semiconductors 、 IGBTs 、 GTOs 、 Thyristors 、 Insulated Gate Bipolar Transistor 、 Gate Turn-Off thyristor 、 conventional thyristor 、 Silicon Controlled Rectifier 、 SCR 、 thyristor-based devices 、 transistor-based devices 、 MOS Controlled Thyristors 、 MCT 、 Emitter Switched Thyristors 、 EST 、 Bipolar Junction Transistors 、 BJT 、 Field Effect Transistors 、 FET 、 Transistor 、 Thyristor 、 Fast Turn-on Thyristors 、 Modified GTO Thyristors 、 Fast, Hiqh-Current Thyristors 、 FHCT 、 Thyristor-type Devices 、 Transistor-type Devices |
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[ pulsed power applications ][ Particle physics ][ Particle research Laser drivers ][ Ozone generators ][ UV-sterilization ][ electrostatic precipitators ] |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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21.08 |
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Rev 21.08a |
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4.2 MB |
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