ISL70419SEH Single Event Effects Testing
●Introduction
■The intense heavy ion environment encountered in space applications can cause a variety of transient and destructive effects in analog circuits, including single-event latch-up (SEL), single-event transients (SET) and single-event burnout (SEB). These effects can lead to system-level failures including disruption and permanent damage. For predictable and reliable system operation, these components have to be formally designed and fabricated for SEE hardness, followed by detailed SEE testing to validate the design. This report discusses the results of SEE testing of Intersil's ISL70419SEH.
●Product Description
■The ISL70419SEH contains four very high precision amplifiers featuring the perfect combination of low noise vs power consumption. These devices are fabricated in a 40V advanced bonded wafer SOI process using deep trench isolation, resulting in a fully isolated structure. This choice of process technology results in latch-up free performance, whether by electrical or single event caused. These devices were also designed for enhance single event transient response resulting in fast SET recovery.
■A super-beta NPN input stage with input bias current cancellation provides low input bias current, low input offset voltage, low input noise voltage, and low 1/f noise corner frequency. These amplifiers also feature high open loop gain for excellent CMRR and THD+N performance. A complementary bipolar output stage enables high capacitive load drive without external compensation.
■These amplifier are designed to operate over a wide supply range of 4.5V to 36V. Applications for these amplifiers include precision active filters, low noise front ends, loop filters, data acquisition and charge amplifiers.
■The combination of high precision, low noise, low power and radiation tolerance provide the user with outstanding value and flexibility relative to similar competitive parts.
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[ precision active filters ][ low noise front ends ][ loop filters ][ data acquisition ][ charge amplifiers ] |
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Test Report |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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July 17, 2014 |
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Rev 0.00 |
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AN1944 |
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1.5 MB |
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