ACS32MS Radiation Hardened Quad 2-Input OR Gate Data Sheet
Gate. For each gate, a HIGH level on either A or B input
results in a HIGH level on the Y output. A LOW level on both
the A and B inputs results in a LOW level on the Y output. All
inputs are buffered and the outputs are designed for
balanced propagation delay and transition times.
The ACS32MS is fabricated on a CMOS Silicon on Sapphire
(SOS) process, which provides an immunity to Single Event
Latch-up and the capability of highly reliable performance in
any radiation environment. These devices offer significant
power reduction and faster performance when compared to
ALSTTL types.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the ACS32MS are
contained in SMD 5962-98624.
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ACS32MS 、 5962F9862401VCC 、 ACS32D/SAMPLE-03 、 5962F9862401VXC 、 ACS32K/SAMPLE-03 、 5962F9862401V9A 、 ACS32DMSR-03 、 ACS32KMSR-03 、 ACS32HMSR-03 |
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Radiation Hardened Quad 2-Input OR Gate 、 Radiation Hardened Quad 2-Input OR Gate Die |
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[ High Speed Control Circuits ][ Sensor Monitoring ][ Low Power Designs ] |
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Datasheet |
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ISO9001 |
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Please see the document for details |
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Aerospace |
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MIL-PRF-38535 、 QML 、 QML Class V |
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14 Ld SBDIP;14 Ld Flatpack |
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English Chinese Chinese and English Japanese |
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November 1998 |
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4545 |
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414 KB |
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