MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPZ60R099C7
●Description
■CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
■600V CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation.
■The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
●Features
■Suitable for hard and softs witching (PFC and high performance LLC)
■Increased MOSFET dv/dt ruggedness to 120V/ns
■Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
■Best in class RDS(on) /package
■Easy to use/drive
■Pb-free plating, halogen free mold compound
■Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
■4pin kelvin source concept
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MOSFET 、 Metal Oxide Semiconductor Field Effect Transistor 、 Power Transistor |
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[ high power/performance SMPS ][ Computing ][ Server ][ Telecom ][ UPS ][ Solar ] |
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Datasheet |
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Please see the document for details |
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PG-TO 247-4 |
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English Chinese Chinese and English Japanese |
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2015-05-0 |
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Rev.2.0 |
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1.8 MB |
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