LSIC2SD065D10A 650 V, 10 A SiC Schottky Barrier Diode
■This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
●Features
■AEC-Q101 qualified
■Positive temperature coefficient for safe operation and ease of paralleling
■175 °C maximum operating junction temperature
■Excellent surge capability
■Extremely fast, temperature-independent switching behavior
■Dramatically reduced switching losses compared to Si bipolar diodes
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SiC Schottky Barrier Diode 、 GEN2 SiC Schottky Diode 、 silicon carbide (SiC) Schottky diodes 、 Boost diodes |
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[ PFC stages ][ DC/DC stages ][ Switch-mode power supplies ][ Uninterruptible power supplies ][ Solar inverters ][ Industrial motor drives ][ EV charging stations ] |
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Datasheet |
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Please see the document for details |
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TO-263-2L;D2PAK |
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English Chinese Chinese and English Japanese |
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10/19/20 |
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830 KB |
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