7N65F 7A,650V N-Channel Power Mosfet
■RDS(ON) =1.35Ω@V GS = 10V
■Ultra low gate charge ( typical 30nC )
■Low reverse transfer Capacitance ( CRSS = typical 18 pF )
■Fast switching capability
■Avalanche energy specified
■Improved dv/dt capability, high ruggedness
|
|
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
ITO-220AB |
|
|
English Chinese Chinese and English Japanese |
|
|
20170701 |
|
|
Revision:20170701 |
|
|
|
|
|
1.1 MB |
- +1 Like
- Add to Favorites
Recommend
- LGE and electronic components catalog distributor Sekorm sign distribution agreement
- Shenzhen Luguang Electronics Announced a Distribution with Sekorm, Bringing Domestic Diodes, Triodes, Rectifier Bridges and Other Products
- WAYON‘s 500V-1500V, Current Covering 2A~40A VDMOSFET for More Power Control
- Unlocking the Technological Charm of High-Speed Blower Tubes: HXY Power Device Optimization Solutions
- Application of MOS Transistor in Switching Power Supply
- The Differences between MOS Tube and IGBT Tube
- Vincotech‘s fastPACK 0 MOS and fastPACK 1 MOS Modules Featuring Cost-effective H-bridge Topology with MOSFETs
- MOS Switch Tube Selection and Principle Application
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
