WNM07N65/WNM07N65F 650V N-Channel MOSFET
●Description
■The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications.
●Features
■650V@TJ=25°C
■Typ.RDS(on)=1.0 Ω
■Low gate charge
■100% avalanche tested
■100% Rg tested
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N-Channel MOSFET 、 N-Channel enhancement MOS Field Effect Transistor |
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Datasheet |
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Please see the document for details |
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TO-220;TO-220-F |
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English Chinese Chinese and English Japanese |
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Jan. 2017 |
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Rev.1.1 |
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2.6 MB |
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