NP100N055MDH, NP100N055NDH, NP100N055PDH MOS FIELD EFFECT TRANSISTOR

PublishTime：2023-06-15

■DESCRIPTION
●The NP100N055MDH, NP100N055NDH, NP100N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.
■FEATURES
●Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
●Super low on-state resistance
▲NP100N055MDH, NP100N055NDH
◆RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 50 A)
◆RDS(on)2 = 6.6 mΩ MAX. (VGS = 4.5 V, ID = 50 A)
▲NP100N055PDH
◆RDS(on)1 = 4.4 mΩ MAX. (VGS = 10 V, ID = 50 A)
◆RDS(on)2 = 6.2 mΩ MAX. (VGS = 4.5 V, ID = 50 A)
●High avalanche energy, High avalanche current
●Logic level drive Type
●Low input capacitance
▲Ciss = 9500 pF TYP. (VDS = 25 V)

Brand of Product：	Renesas
Part#：	NP100N055MDH 、 NP100N055NDH 、 NP100N055PDH 、 NP100N055PDH-E2-AY 、 NP100N055PDH-E1-AY 、 NP100N055NDH-S18-AY 、 NP100N055MDH-S18-AY More Part#
Product Category：	MOS FIELD EFFECT TRANSISTOR 、 SWITCHING N-CHANNEL POWER MOS FET 、 N-channel MOS Field Effect Transistors More
Application：	[ high current switching applications ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-220;TO-262;TO-263;MP-25K;MP-25SK;MP-25ZP
Language：	English Chinese Chinese and English Japanese
Date of Creation：	December 2007
Version Number：	3rd edition
Data Encoding：	D18804EJ3V0DS00
Data Size：	651 KB

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