NP100N055MDH, NP100N055NDH, NP100N055PDH MOS FIELD EFFECT TRANSISTOR
●The NP100N055MDH, NP100N055NDH, NP100N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.
■FEATURES
●Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
●Super low on-state resistance
▲NP100N055MDH, NP100N055NDH
◆RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 50 A)
◆RDS(on)2 = 6.6 mΩ MAX. (VGS = 4.5 V, ID = 50 A)
▲NP100N055PDH
◆RDS(on)1 = 4.4 mΩ MAX. (VGS = 10 V, ID = 50 A)
◆RDS(on)2 = 6.2 mΩ MAX. (VGS = 4.5 V, ID = 50 A)
●High avalanche energy, High avalanche current
●Logic level drive Type
●Low input capacitance
▲Ciss = 9500 pF TYP. (VDS = 25 V)
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NP100N055MDH 、 NP100N055NDH 、 NP100N055PDH 、 NP100N055PDH-E2-AY 、 NP100N055PDH-E1-AY 、 NP100N055NDH-S18-AY 、 NP100N055MDH-S18-AY |
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MOS FIELD EFFECT TRANSISTOR 、 SWITCHING N-CHANNEL POWER MOS FET 、 N-channel MOS Field Effect Transistors |
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Datasheet |
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Please see the document for details |
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TO-220;TO-262;TO-263;MP-25K;MP-25SK;MP-25ZP |
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English Chinese Chinese and English Japanese |
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December 2007 |
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3rd edition |
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D18804EJ3V0DS00 |
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651 KB |
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