GLMA1P5015AD 15W, 28V, 30-1500MHz GaN RF Transistor

2023-06-14
●Description
■The GLMA1P5015AD is a typical 15W (P3dB) at +28V transistor,discrete GaN on SiC HEMT. Ideal for applications in massive MIMO systems, outdoor small cells and remote radio heads in the frequency range from 30-1500MHz. Available in DFN outline.
●Features
■Frequency:30-1500MHz
■50 Ω Input Matched
■Output Power(P3dB)1 :41. 7dBm
■Power Gain1 :17.6 dB
■Typical DE(P3dB)1:77.68 %
■Operating Voltage:28 V
■Low thermal resistance package
■CW and Pulse capable
■Note 1:EVB Performance @ 500MHz

SDSX

GLMA1P5015AD

More

Part#

GaN RF Transistortransistor

More

Base station ]Radio relay station ]Military radar ]Civilian radar ]Test instrumentation ]Wideband amplifiers ]narrowband amplifiers ]Jammers ]

More

Datasheet

More

More

Please see the document for details

More

More

English Chinese Chinese and English Japanese

2023/2/22

V1.0

744 KB

- The full preview is over. If you want to read the whole 5 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: