LNC7N65\LND7N65 N-channel 650V, 7A Power MOSFET
●The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance, superior switching performance and high avalance energy.
■Features
●Low RDS(on)
●Low gate charge (typ. Qg =20.7nC)
●100% UIS tested
●RoHS compliant
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N-channel 650V, 7A Power MOSFET 、 N-Channel MOSFET 、 Power MOSFET |
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[ Power factor correction ][ Switched mode power supplies ][ LED driver ] |
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Datasheet |
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Please see the document for details |
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TO-220;TO-220F |
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English Chinese Chinese and English Japanese |
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Jan-2020 |
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Version 1 |
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1.6 MB |
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