TMA7N65HG,TMC7N65HG,TMD7N65HG,TMR7N65HG,TMU7N65HG 650V N-Channel MOSFET
VDMOSFET is a double-diffusion device which the current flows is vertically,and is a voltage-controlled device.Under the control of the appropriate gate voltage,the semiconductor surface is inverted,forming a conductive channel and an appropriate amount of current flows between Drain and Source.Compared with bipolar transistor,its switching speed and switching loss are small.High input impedance,low driving power,good frequency characteristics,In particular,it has a negative temperature coefficient.
●Fast switching
●100% avalanche tested
●Improved dv/dt capability
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[ Switch Mode Power Supply (SMPS) ][ Uninterruptible Power Supply (UPS) ][ Power Factor Correction (PFC) ] |
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Datasheet |
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Please see the document for details |
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TO-220F;TO-262;TO-252;TO-251;TO-220FP-NL |
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English Chinese Chinese and English Japanese |
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V1.0 |
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1.3 MB |
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