HB2637L-EVK-301_DPT_HS Double Pulse Test Simulation with HB2637L-EVK-301 Simulation Model
●Features
■Double pulse test circuit (High-side switching)
■4th generation SiC MOSFET SCT4036KW7 + gate driver IC BM61S41RFV-C.
■Device equivalent circuit model of the components are used for simulation accuracy.
■Parasitic inductance of PCB patterns are modelled and applied to the simulation circuit.
■Vgs, VDC and other constants can be modified.
■Approx. simulation elapsed time is 6 min.
|
|
Schematics |
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
English Chinese Chinese and English Japanese |
|
2022. Sep |
|
Rev.00 |
|
65UG039E |
|
1.1 MB |
- +1 Like
- Add to Favorites
Recommend
- Silicon Carbide cooperation between SEMIKRON and ROHM Semiconductor: ROHM’s SiC technology empowers SEMIKRON’s eMPack® for the next generation of electric vehicles
- Notice of Integration of ROHM Three Sales Companies in China
- Continental acknowledges ROHM Semiconductor with the “Supplier of the Year 2022 Award“
- ROHM‘s Nano Energy™ and LAPIS Technology‘s Charge Control IC Help Maxell Energy Harvesting-compatible Evaluation Kit
- ROHM Online Distributor China | Sekorm
- ROHM SiC MOSFETs Solve Design Challenges for Leading Solar Energy Company Midnite Solar
- Ultra-Low IQ PMIC from ROHM Selected to Power NXP iMX8M Nano for High Performance Embedded Artists Industrial Control Board
- ROHM’s Product Longevity Program Enables Worry-free Adoption of ROHM Products
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.