MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3 Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier
●FEATURES
■Trench MOS Schottky technology
■Lower power losses, high efficiency
■ Low forward voltage drop
■ High forward surge capability
■ High frequency operation
■ Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
■ Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package)
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MBR10xxx-E3 、 MBRF10xxx-E3 、 MBRB10xxx-E3 、 MBR1090 、 MBR10100 、 MBRF1090 、 MBRF10100 、 MBRB1090 、 MBRB10100 、 MBR10100-E3/4W 、 MBRF10100-E3/4W 、 MBRB10100-E3/4W 、 MBRB10100-E3/8W |
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[ switching mode power supplies ][ freewheeling diodes ][ DC/DC converters ] |
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Datasheet |
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Please see the document for details |
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TO-220AC;ITO-220AC;TO-263AB |
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English Chinese Chinese and English Japanese |
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10-May-16 |
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Revision: 10-May-16 |
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89034 |
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209 KB |
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